Vi. Smelyansky et Js. Tse, THE ELECTRONIC-STRUCTURE OF METALLO-SILICON CLATHRATES NAXSI136 (X=0,4, 8, 16 AND 24), Chemical physics letters, 264(5), 1997, pp. 459-465
The electronic band structures of sodium-containing silicon clathrates
(Na-x Si-136) have been studied with the first principles all electron
full potential linearized plane wave method. It is shown that at low
dopant concentration (x less than or equal to 8), the Si clathrates be
have either as an insulator or a semi-metal with very small electrical
conductivity. However, the metallic character becomes more prominent
with increasing sodium concentration. The theoretical results help to
elucidate the mechanism for the observed insulator to metal transition
in these compounds when the concentration of the Na metal exceeds x >
8.