THE ELECTRONIC-STRUCTURE OF METALLO-SILICON CLATHRATES NAXSI136 (X=0,4, 8, 16 AND 24)

Citation
Vi. Smelyansky et Js. Tse, THE ELECTRONIC-STRUCTURE OF METALLO-SILICON CLATHRATES NAXSI136 (X=0,4, 8, 16 AND 24), Chemical physics letters, 264(5), 1997, pp. 459-465
Citations number
29
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
ISSN journal
00092614
Volume
264
Issue
5
Year of publication
1997
Pages
459 - 465
Database
ISI
SICI code
0009-2614(1997)264:5<459:TEOMCN>2.0.ZU;2-D
Abstract
The electronic band structures of sodium-containing silicon clathrates (Na-x Si-136) have been studied with the first principles all electron full potential linearized plane wave method. It is shown that at low dopant concentration (x less than or equal to 8), the Si clathrates be have either as an insulator or a semi-metal with very small electrical conductivity. However, the metallic character becomes more prominent with increasing sodium concentration. The theoretical results help to elucidate the mechanism for the observed insulator to metal transition in these compounds when the concentration of the Na metal exceeds x > 8.