Ferrimagnetic Mn4N films were deposited in situ on glass substrates, b
y d.c. reactive magnetron sputtering from a sintered Mn target. An Mn4
N ordered structure was obtained at a substrate temperature of 150-250
degrees C and gas pressure of 3-8 mTorr (flow rate ratio Ar:N-2 = 2:1
), without any further annealing. Perpendicular magnetic anisotropy ex
ists in these films, resulting in a larger coercivity (1150-2300 Oe) m
easured perpendicular to the film plane than that parallel (650-1550 O
e). The coercivity in either direction decreases with increasing subst
rate temperature, while it increases with increasing gas pressure. The
saturation flux density of the films is 120-610 G, increasing with in
creasing substrate temperatures. The resulting perpendicular magnetic
anisotropy is attributed to the ordering in the crystal structure, fro
m the stress-induced anisotropy and from the shape anisotropy.