STATIC CHARACTERISTICS OF MOS-CONTROLLED THYRISTORS-ANALYSIS SIMULATION, AND EXPERIMENTAL RESULTS

An equation for the i(K)-v(AK) static forward characteristic of an MOS -controlled thyristor (MCT) is derived using a four-transistor equival ent model of the device. The Ebers-Moll large-signal model is used for n-p-n and p-n-p bipolar transistors. The equation is similar to that for forward-biased diodes. The equivalent saturation current of the MC T is a function of both the saturation currents and the forward and re verse current gains of the n-p-n and p-n-p transistors. Effects of the se parameters on the MCT equivalent saturation current are investigate d. Voltages and currents of all transistors that form the MCT equivale nt model are simulated using SPICE to explain the behavior of the devi ce in the forward-biased region. Finally, the experimental i(K)-v(AK) characteristics are presented. The calculated and measured i(K)-v(AK) characteristics were in good agreement. The measured ON-voltage drop w as 1.6 V at a cathode current of 200 A and a temperature of 300 K. MCT s are especially useful power devices for electric car applications.