SUBSTRATE CURRENT CHARACTERISTICS IN PARTIALLY DEPLETED SILICON-ON-INSULATOR N-MOSFETS FROM ROOM-TEMPERATURE DOWN TO 4.2 K

This paper reports on the substrate current (I-B) characteristics of p artially depleted silicon-on-insulator (SOI) n-MOSFETs at 4.2, 77 and 300 K. It is demonstrated that, to a good approximation, the same mode l as for bulk MOSFETs can be used to describe the gate and drain volta ge dependence of I-B in SOI MOSFETs. The temperature dependence of the semi-empirical coefficients is discussed and the impact of the so-cal led twin-gate concept on I-B is investigated.