PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS

Authors
KROTKUS A MARCINKEVICIUS S JASINSKI J KAMINSKA M TAN HH JAGADISH C
Citation
A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS, Applied physics letters, 66(24), 1995, pp. 3304-3306
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
24
Year of publication
1995
Pages
3304 - 3306
Database
ISI
SICI code
0003-6951(1995)66:24<3304:PCLIGI>2.0.ZU;2-W