HIGH ETCH RATES OF GAN WITH MAGNETRON REACTIVE ION ETCHING IN BCL3 PLASMAS

Authors
MCLANE GF CASAS L PEARTON SJ ABERNATHY CR
Citation
Gf. Mclane et al., HIGH ETCH RATES OF GAN WITH MAGNETRON REACTIVE ION ETCHING IN BCL3 PLASMAS, Applied physics letters, 66(24), 1995, pp. 3328-3330
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
24
Year of publication
1995
Pages
3328 - 3330
Database
ISI
SICI code
0003-6951(1995)66:24<3328:HEROGW>2.0.ZU;2-W