A NOTE ON THE SILICON-CARBIDE TRANSITION LAYER BETWEEN SILICON SUBSTRATE AND DIAMOND FILM

Authors
QIMIN W QINGGUI C RIHUA S RONGKANG D JIAN Z
Citation
W. Qimin et al., A NOTE ON THE SILICON-CARBIDE TRANSITION LAYER BETWEEN SILICON SUBSTRATE AND DIAMOND FILM, Journal of hard materials, 6(1), 1995, pp. 45-49
Citations number
5
Categorie Soggetti
Material Science
Journal title
Journal of hard materials → ACNP
ISSN journal
0954027X
Volume
6
Issue
1
Year of publication
1995
Pages
45 - 49
Database
ISI
SICI code
0954-027X(1995)6:1<45:ANOTST>2.0.ZU;2-A
Abstract
Transmission electron microscopy, electron diffraction and metallograp hic techniques have been used to study the transition SiC layer formed between a (001) silicon substrate and CVD diamond films. The results indicate that the epitaxial crystallographic relationships are d(110)( SiC) to d(111)(Si) and d(210)(SiC) to d(220)(Si) at the SiC:silicon su bstrate interface and d(110)(dia) to d(111)(SiC).