ELECTRICAL-PROPERTIES OF HETEROJUNCTIONS OF PVDF-C2F3H POLYPYRROLE COMPOSITES WITH P-DOPED OR N-DOPED SILICON/

Authors
JESZKA JK SROCZYNSKA A BOITEUX G HOHOANG A LAMAIRE M FACHE F KRYSZEWSKI M
Citation
Jk. Jeszka et al., ELECTRICAL-PROPERTIES OF HETEROJUNCTIONS OF PVDF-C2F3H POLYPYRROLE COMPOSITES WITH P-DOPED OR N-DOPED SILICON/, Advanced materials for optics and electronics, 6(5-6), 1996, pp. 348-352
Citations number
15
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic",Chemistry
Journal title
Advanced materials for optics and electronics → ACNP
ISSN journal
10579257
Volume
6
Issue
5-6
Year of publication
1996
Pages
348 - 352
Database
ISI
SICI code
1057-9257(1996)6:5-6<348:EOHOPP>2.0.ZU;2-E
Abstract
The temperature dependence of the electrical properties of heterojunct ions formed by polypyrrole composites with PVDF copolymer and silicon were studied, We show that using such composites it is possible to pre pare junctions with good rectifying properties, comparable with those obtained using polypyrrole or poly( N-methylpyrrole). The observed for ward-bias current-voltage characteristics can be satisfactorily fitted using a modified Schottky equation, The temperature dependence of the I-V characteristics shows that the transport mechanism, especially in the case of p-Si junctions, is more complicated and probably tunnelli ng between localised levels plays an important role.