PHOTOENHANCED CURRENTS IN PENTACENE LAYERS

Authors
JAROSZ G SIGNERSKI R GODLEWSKI J
Citation
G. Jarosz et al., PHOTOENHANCED CURRENTS IN PENTACENE LAYERS, Advanced materials for optics and electronics, 6(5-6), 1996, pp. 379-382
Citations number
16
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic",Chemistry
Journal title
Advanced materials for optics and electronics → ACNP
ISSN journal
10579257
Volume
6
Issue
5-6
Year of publication
1996
Pages
379 - 382
Database
ISI
SICI code
1057-9257(1996)6:5-6<379:PCIPL>2.0.ZU;2-B
Abstract
Photoenhanced current measurements carried out on polycrystalline pent acene layers are presented. A new approach to the description of the p hotoenhanced current is proposed. The inclusion of generation and reco mbination processes induced by oxygen centres enables us to explain th e experimental current-voltage and current-light intensity relations.