1.75-MU-M STRAINED INGAAS MULTIQUANTUM-WELL LASER GROWN ON INAS0.08P0.92 TERNARY SUBSTRATE

The authors have demonstrated a strained InGaAs multiquantum well lase r grown on an InAs0.08P0.92 ternary substrate. The epitaxial structure was grown using metal organic vapour phase epitaxy (MOVPE). The InAsP wafers were characterised using room temperature photoluminescence, x -ray diffraction and x-ray topography. Pulsed power levels of 60m W/fa cet at lambda = 1.75 mu m were measured at T = 250K. A characteristic temperature of T-0 = 46K was observed over a temperature range of 78-2 50K.