DYNAMIC PROPERTIES OF 1.3-MU-M SEMI-INSULATING-BH LIGHT-EMISSION-AND-DETECTION (LEAD)-DIODE MODULE FOR SUBSCRIBER TCM TRANSMISSION-SYSTEMS

The dynamic properties of a 1.3 mu m light-emission-and-detection (LEA D)-diode module that has a high mesa semi-insulating buried heterostru cture (SI-BH) to reduce the capacitance of the chip (0.6-0.8 pF) are d escribed. A modulation bandwidth of 12 GHz in laser diode (LD) operati on, and detection bandwidth of similar to 1.9GHz in photodetector (PD) operation are achieved using a chip and a module, respectively. In bi t error rate (BER) performance at 30 Mbit/s, a receiver sensitivity (B ER = 10(-8)) of -37.4 dBm is confirmed, and a switching time of under 1 mu s from LD to PD operation is estimated using a circuit simulator.