LONG-WAVELENGTH GAAS ALAS DISTRIBUTED BRAGG REFLECTORS FOR USE IN GASB-BASED RESONANT-CAVITY DETECTORS/

Authors
MANSOOR F HAYWOOD SK GREY R
Citation
F. Mansoor et al., LONG-WAVELENGTH GAAS ALAS DISTRIBUTED BRAGG REFLECTORS FOR USE IN GASB-BASED RESONANT-CAVITY DETECTORS/, Electronics Letters, 31(3), 1995, pp. 200-202
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
3
Year of publication
1995
Pages
200 - 202
Database
ISI
SICI code
0013-5194(1995)31:3<200:LGADBR>2.0.ZU;2-R
Abstract
Two GaAs/AlAs Bragg reflector stacks were designed for operation at 1. 68 mu m and 2.2 mu m to be used in resonant cavity photodetectors. The mirrors were grown by solid source MBE, and measured reflectivities w ere in excess of 95 and 85%, respectively.