STRAINED INGAAS QUANTUM DISK LASER WITH NANOSCALE ACTIVE-REGION FABRICATED WITH SELF-ORGANIZATION ON GAAS (311)B SUBSTRATE

Authors
TEMMYO J KURAMOCHI E SUGO M NISHIYA T NOTZEL R TAMAMURA T
Citation
J. Temmyo et al., STRAINED INGAAS QUANTUM DISK LASER WITH NANOSCALE ACTIVE-REGION FABRICATED WITH SELF-ORGANIZATION ON GAAS (311)B SUBSTRATE, Electronics Letters, 31(3), 1995, pp. 209-211
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
3
Year of publication
1995
Pages
209 - 211
Database
ISI
SICI code
0013-5194(1995)31:3<209:SIQDLW>2.0.ZU;2-1
Abstract
Continuous-wave (CW) operation cf a strained InGaAs quantum disk laser with nanoscale active-structures self-organised on GaAs (311)B substr ate is demonstrated at room temperature. The threshold current is simi lar to 20 mA, which is considerably lower than that of double quantum well lasers on GaAs (100) substrate grown side-by-side.