Light-emitting diodes (LEDs) having a ZnCdSe/ZnSe single quantum well
(SQW) were grown by metalorganic chemical vapour deposition (MOCVD) at
a growth temperature of 480 degrees C. Diisopropylamine (Di-PNH) was
used as a p-type dopant. Light emission was observed at a wavelength o
f 500 nm (2.480 eV) with a full-width at half-maximum (FWHM) of 7.3 nm
(36 meV) at 77 K.