PARTICLE CONTAMINATIONS IN LPCVD POLYSILICON

Citation
Wh. Chen et al., PARTICLE CONTAMINATIONS IN LPCVD POLYSILICON, Electronics Letters, 31(3), 1995, pp. 239-241
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
31
Issue
3
Year of publication
1995
Pages
239 - 241
Database
ISI
SICI code
0013-5194(1995)31:3<239:PCILP>2.0.ZU;2-R
Abstract
Particle contamination of poly-Si films deposited in an LPCVD system w as investigated by using the orthogonal array L8 experiment. Gas injec tion, temperature, pressure and flow rate were used as variable factor s. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection was the key para meter to suppress particle formation. Applying a multiple-hole injecto r at the back of the tube reduced these surface defects.