Tin doped indium oxide (ITO) films were deposited on glass substrates
by rf reactive magnetron sputtering using a metallic alloy target (In-
Sn, 90-10). The post-deposition annealing has been done for ITO films
in air and the effect of annealing temperature on the electrical, opti
cal and structural properties of ITO films was studied. It has been fo
und that the increase of the annealing temperature will improve the fi
lm electrical properties. The resistivity of as deposited film is abou
t 1.3 x 10(-1) Omegacm and decreases down to 6.9 x 10(-3) Omega*cm as
the annealing temperature is increased up to 500 degrees C. In additi
on, the annealing will also increase the film surface roughness which
can improve the efficiency of amorphous silicon solar cells by increas
ing the amount of light trapping.