B. Swerydakrawiec et Jl. Cotter, THE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE BY GROUP-15 TRIARYLDERIVATIVES - EFFECTS OF SURFACE PHOTOOXIDATION, Journal of the Electrochemical Society, 142(6), 1995, pp. 93-95
This work centers on an evaluation of the impact of photo-oxidation of
the porous Si (PS) surface on the ability of the triaryl derivatives
of the Group 15 elements EPh(3) (E = N, P, As) to quench the photolumi
nescence of porous silicon. The ability of porous Si to be quenched by
these Group 15 triaryl derivatives is monitored with regard to four d
ifferent surface treatments: freshly prepared porous Si, (i) without a
nd (ii) with illumination to steady-state photoluminescence intensity;
porous Si aged in ambient air for one month, (iii) without and (iv) w
ith illumination to steady-state PL conditions. We specifically employ
as a criterion for such an analysis the magnitude(s) of the maximum p
ercentage of the integrated PL which can be quenched by a given Lewis
base for a particular surface, and compare the trends observed with re
ported gas phase proton affinities.