ENHANCEMENT OF ELECTROLUMINESCENCE FROM N-TYPE POROUS SILICON AND ITSPHOTOELECTROCHEMICAL BEHAVIOR

In a study of the electroluminescence (EL) of porous silicon on an n-t ype Si wafer using an S2O82- electrolyte solution, the addition of C2H 5OH: to the solution was found to enhance the intensity of EL from the porous silicon. The porous silicon structure was classified into two types which were prepared based on whether the anodizing current densi ty for forming the porous n-Si was above or below the saturated photoc urrent. A single layer of fine pores was formed galvanostatically with illumination at a current density below the saturated photocurrent de nsity, and a double layer of fine and rough pores was formed under the same conditions but at a current density above the saturated photocur rent density. The electrochemical and enhanced electroluminescent prop erties of the two types of porous silicon were studied.