TISI2 INTEGRATION IN A SUBMICRON CMOS PROCESS .2. INTEGRATION ISSUES

Authors
KALNITSKY A BRUN N BRUN A GONCHOND JP
Citation
A. Kalnitsky et al., TISI2 INTEGRATION IN A SUBMICRON CMOS PROCESS .2. INTEGRATION ISSUES, Journal of the Electrochemical Society, 142(6), 1995, pp. 1992-1996
Citations number
10
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
142
Issue
6
Year of publication
1995
Pages
1992 - 1996
Database
ISI
SICI code
0013-4651(1995)142:6<1992:TIIASC>2.0.ZU;2-V
Abstract
Issues associated with TiSi2 integration in a submicron complementary metal oxide semiconductor process are investigated. These include diel ectric consumption by the silicidation process as well as the effects of postsalicidation thermal processing on boron and arsenic redistribu tion in mono-Si and phosphorus redistribution in poly-Si.