THERMAL-WAVE IMAGING TO CHARACTERIZE THE FORMATION OF TITANIUM DISILICIDE ON MONOCRYSTALLINE, POLY-SILICON, AND CRYSTALLIZED AMORPHOUS-SILICON SUBSTRATES

Citation
A. Brun et al., THERMAL-WAVE IMAGING TO CHARACTERIZE THE FORMATION OF TITANIUM DISILICIDE ON MONOCRYSTALLINE, POLY-SILICON, AND CRYSTALLIZED AMORPHOUS-SILICON SUBSTRATES, Journal of the Electrochemical Society, 142(6), 1995, pp. 1996-1999
Citations number
4
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
142
Issue
6
Year of publication
1995
Pages
1996 - 1999
Database
ISI
SICI code
0013-4651(1995)142:6<1996:TITCTF>2.0.ZU;2-0
Abstract
In this paper we show the use of a nondestructive method, thermal-wave imaging, for characterizing the formation of titanium disilicide. We indicate that it is possible to have information on its structure. The observation of thermal-wave signals and images allows us to recognize the metastable C49 phase and the equilibrium C54 phase of the disilic ide. The thermal-wave topographic signals and images give information on the stability of the titanium disilicide after deposition and therm al annealing of low pressure chemical vapor deposition tetraethylortho silicate oxide.