3-DIMENSIONAL PHONON CONFINEMENT IN CDSE MICROCRYSTALLITES IN GLASS

Citation
Wso. Rodden et al., 3-DIMENSIONAL PHONON CONFINEMENT IN CDSE MICROCRYSTALLITES IN GLASS, Semiconductor science and technology, 10(6), 1995, pp. 807-812
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
6
Year of publication
1995
Pages
807 - 812
Database
ISI
SICI code
0268-1242(1995)10:6<807:3PCICM>2.0.ZU;2-8
Abstract
Results are presented which demonstrate the existence of unambiguous t hree-dimensional quantum confinement of phonons within crystallites of the Il-VI semiconductor CdSe, which were prepared by the method of di ffusive growth within a doped glass matrix. The confinement was invest igated by means of Raman scattering from zone centre longitudinal opti cal (Lo) phonons. These Raman spectra illustrate Lo phonon peaks showi ng a low-energy shift and broadening with decreasing crystallite size. The experimental measurements are compared with a theoretical model o f phonon confinement which includes a size distribution parameter. The experimental results are in good agreement with the predictions of th is model. Surface vibrational modes and the effects of hydrostatic pre ssure from the glass matrix do not appear to be of significance in the samples investigated.