COMPUTER-AIDED STUDIES ON THE WIDE-BAND MICROWAVE CHARACTERISTICS OF A SILICON DOUBLE AVALANCHE REGION (DAR) DIODE

The results of accurate and realistic high-frequency numerical analysi s of a silicon DAR (double avalanche region) diode indicate some uniqu e and useful microwave characteristics. The DAR diode under any struct ural condition exhibits multiband microwave negative resistance charac teristics between 8 and 350 GHz which would make it possible to realiz e wide-band microwave oscillations (8 to 350 GHz) from any single DAR diode with a multituning facility. The negative resistance space distr ibution profiles of the diode at high frequencies of operation shows n ear sinusoidal variation, which suggests that a DAR diode can have sev eral optimum diode widths for generation of a particular frequency. Th e results have been explained on the basis of computation of the total avalanche delay produced in both avalanche regions and transit time d elay produced in the drift region.