ANALYSIS OF SPACE RADIATION DATA OF SEMICONDUCTOR MEMORIES

This article presents an analysis of radiation effects for several sel ect device types and technologies aboard the Combined Release and Radi ation Effects Satellite (CRRES) satellite. These space-flight measurem ents covered a period of about 14 months of mission lifetime. Single E vent Upset (SEU) data of the investigated devices from the Microelectr onics Package (MEP) were processed and analyzed. Valid upset measureme nts were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devic es were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented. Published by Elsevier Sc ience Ltd