FORMATION OF HEAVILY-DOPED SEMICONDUCTOR LAYERS BY PULSED ION-BEAM TREATMENT

Authors
BAYAZITOV RM ZAKIRZYANOVA LK KHAIBULLIN IB REMNEV GE
Citation
Rm. Bayazitov et al., FORMATION OF HEAVILY-DOPED SEMICONDUCTOR LAYERS BY PULSED ION-BEAM TREATMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(1), 1997, pp. 35-38
Citations number
12
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
122
Issue
1
Year of publication
1997
Pages
35 - 38
Database
ISI
SICI code
0168-583X(1997)122:1<35:FOHSLB>2.0.ZU;2-5
Abstract
The formation of heavily doped Si and GaAs layers using implantation a nd powerful pulsed ion beams has been investigated. The influence of t he depth distribution of energy released by the ions on the temperatur e profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneou s action of impurity diffusion processes normal to the surface and dec omposition of GaAs at the surface, the heavily doped (8 x 10(19) cm(-3 )) layers are formed in the subsurface region (0.1-0.5 mu m).