Dz. Xie et al., DAMAGE AND THERMAL ANNEALING OF IN-AXIS SAPPHIRE( IMPLANTED A), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(1), 1997, pp. 55-58
Single crystal samples of [<1(2)over bar 10>]alpha-Al2O3 were implante
d with 100 keV and 360 keV indium ions to doses of 6 x 10(16) ions/cm(
2), 1 x 10(16) ions/cm(2), and 3 x 10(16) ions/cm(2), respectively, at
room temperature (RT). The implanted samples were annealed isothermal
ly in high purity argon ambient at 900 degrees C, from 2 to 24 h. Ruth
erford Backscattering Spectrometry and Channelling (RBS-C) and Reflect
ion High Energy Electron Diffraction (RHEED) have been used to study t
he depth distributions of lattice damage and impurity, as well as the
annealing behavior. All three as-implanted samples do not show an amor
phous layer, which indicated that the self-annealing is severe during
In ion implantation of alpha-Al2O3 at RT. For the 100 keV ion implante
d samples, In loss and formation of In2O3 were observed after 12 h ann
ealing. The In ions are completely located in the interstitial sites f
or all samples annealed at 900 degrees C for 12 h. For the higher ener
gy (360 keV) implantation, single crystal is retained at the outermost
surface in the as-implanted sample.