THE EFFECTS OF MG AND NB IMPLANTATION ON MEAN GRAIN-SIZE OF SNO2 THIN-FILMS

Authors
ZHANG T ZHANG TG CHEN J ZHANG HX MA BK
Citation
T. Zhang et al., THE EFFECTS OF MG AND NB IMPLANTATION ON MEAN GRAIN-SIZE OF SNO2 THIN-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(1), 1997, pp. 59-62
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
122
Issue
1
Year of publication
1997
Pages
59 - 62
Database
ISI
SICI code
0168-583X(1997)122:1<59:TEOMAN>2.0.ZU;2-Y
Abstract
Implantation of Mg and Nb ions into 300 nm thick SnO2 thin films, whic h were deposited on Si wafers by Ar ion sputtering SnO2 targets, was p erformed. These films were subjected to annealing in an air atmosphere at 500 degrees C for 4 h. XRD and XPS analyses of films were conducte d. It was found that Mg implantation prevented grains of SnO, thin fil ms from growing in subsequent annealing, and conversely for Nb implant ation.