EFFECTS OF NEUTRON FLUENCES UP TO 10(16) N CM(2) AND GAMMA-DOSE UP TO5 MRAD ON MONOLITHIC FAST PREAMPLIFIERS/

Authors
BASCHIROTTO A CASTELLO R ONADO C PESSINA G RANCOITA PG SEIDMAN A
Citation
A. Baschirotto et al., EFFECTS OF NEUTRON FLUENCES UP TO 10(16) N CM(2) AND GAMMA-DOSE UP TO5 MRAD ON MONOLITHIC FAST PREAMPLIFIERS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(1), 1997, pp. 73-78
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
122
Issue
1
Year of publication
1997
Pages
73 - 78
Database
ISI
SICI code
0168-583X(1997)122:1<73:EONFUT>2.0.ZU;2-3
Abstract
A fast bipolar monolithic Charge Sensitive Preamplifier (CSP), impleme nted in a 2 mu m BiCMOS technology called HF2CMOS, was exposed to neut ron fluences (phi) of up to about 10(16) n/cm(2) and photons of up to 5 Mrad. An increasing degradation of the base spreading resistance, r( bb') as well as increased parallel noise of the input NPN transistor a nd the PMOS transistor of the second stage of the CSP, was observed fo r phi > 10(14) n/cm(2). The increase of r(bb') was found to be consist ent with a decrease of carrier concentration in the base region, after maximum neutron irradiation.