Hs. Wang et al., ULTRAFAST CROSS-WELL CARRIER TRANSPORT IN A STRAINED MULTIPLE-QUANTUM-WELL INGAAS-GAAS P-I-N MODULATOR, IEEE journal of quantum electronics, 33(2), 1997, pp. 192-197
We report ultrafast optical pump-probe measurements of cross-well carr
ier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n mo
dulator. The transmission response of the modulator is recorded over a
range of reverse bias values, wavelengths, and power levels, producin
g several qualitatively different response types, A simplified physica
l model is developed to describe this behavior, This model includes tr
ansmission changes due to exciton saturation and excitonic field scree
ning, carrier emission from the quantum wells and drift through the in
trinsic region, and voltage diffusion across the p- and n-doped electr
odes. This model agrees well with the experimental data.