DEFECT ANNEALING AND THE FORMATION OF LI-RICH CLUSTERS IN AL-LI ALLOYS

Citation
Hm. Fretwell et al., DEFECT ANNEALING AND THE FORMATION OF LI-RICH CLUSTERS IN AL-LI ALLOYS, Journal of physics. Condensed matter, 7(23), 1995, pp. 4573-4581
Citations number
24
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09538984
Volume
7
Issue
23
Year of publication
1995
Pages
4573 - 4581
Database
ISI
SICI code
0953-8984(1995)7:23<4573:DAATFO>2.0.ZU;2-N
Abstract
Positron annihilation lineshape measurements are conducted on pure Al, Al-1.9 at.% Li and Al-(12.0-12.5) at.% Li alloys. The recovery of eac h sample following quench and/or cold-work treatments is discussed in terms of vacancy migration and clustering, dislocation annealing and p recipitation. The results indicate precipitation in both alloy concent rations but no positron trapping at dislocations. All cold-worked allo ys show large vacancy clustering effects, providing strong evidence of vacancy agglomeration at precipitates.