DIRECT LIQUID INJECTION MOCVD OF HIGH-QUALITY PLZT FILMS

High quality lanthanum-modified lead zirconate titanate (PLZT) films h ave been deposited on (111) Pt/Ti/SiO2/Si substrates by direct liquid injection (DLI) metal-organic chemical vapor deposition (MOCVD). The a s-deposited PLZT films have smooth, reflective surfaces which were cha racterized by scanning electron microscopy and variable angle spectros copic ellipsometry. X-ray diffraction (XRD) measurements indicated tha t single perovskite phase with a-axis oriented PLZT films were formed in situ at a substrate temperature of 650 degrees C. Typical P-E hyste resis loop exhibits remanent polarization as high as 2P(r)=48.1 mu C/c m(2). The coercive field is 2E(c)=98 kV/cm. Electrical fatigue tests s how 70% of the original switched polarization remained after 1 x 10(10 ) cycles.