FERROELECTRIC PROPERTIES OF HYDROTHERMALLY PREPARED BATIO3 THIN-FILMSON SI(100) SUBSTRATES BY LOW-TEMPERATURE PROCESSING

Polycrystalline BaTiO3 thin films were prepared hydrothermally on Ti-d eposited Si(100) substrates at 220 degrees C for 24 h using a 2.0 N Ba (OH)(2) solution. The surface morphology of the films observed by scan ning electron microscopy indicated that the films were crack-free and uniform, and the thickness of the cross section was about 350 nm. From the AES analysis of the films, it was found that stoichiometrically u niform films exist and serious interdiffusion in the interface region did not appear. The dielectric constant and dielectric loss at 10 kHz at room temperature were about 150-200 and below 0.08, respectively. T he capacitance dependence on applied de voltage exhibited maximum valu e at -0.9 V and breakdown did not occur in the measurement range. The hydrothermally prepared films showed ferroelectric behavior and that w as found by us for the first time. The measured value of remanent pola rization (P-r) and coercive field (E(c)) amounted to 21.6 mu C/cm(2) a nd 26 kV/cm, respectively.