TEM INVESTIGATION OF ION-BEAM SYNTHESIZED SEMICONDUCTING FESI2

Both as-implanted and annealed semiconducting FeSi2 samples fabricated using ion beam synthesis technique were studied by transmission elect ron microscopy. A continuous buried silicide layer with larger precipi tates and sharper interfaces formed during annealing at 900 degrees C for 18 h. Different orientation relationships between the silicide gra ins and the silicon substrate were found. The existence of a large var iety of parallel lattice plane pairs with the available small mismatch es between the two phases results in these preferred orientation relat ionships.