TEMPERATURE-DEPENDENT FACET DEVELOPMENT IN THE DEPOSITION OF GAINP ONNONPLANAR SURFACES

The low-pressure (20 mbar) organometallic vapour-phase epitaxy (LP-OMV PE) of GaInP on non-planar {001} GaAs substrates has been examined. Th e encountered {<(hh)over bar k>}A(k>h) and {1(1) over bar0$} faceting features develop along the bottom corner and the top edge configuratio ns of the inverted and dovetail grooves, respectively. At higher tempe ratures (T greater than or equal to 720 degrees C) these features are no longer present. The results have been compared to computer simulati ons of surface concentration profiles, whereby the inversely proportio nal relation between temperature and supersaturation, along with varyi ng growth rate on adjacent surfaces of different crystallographic orie ntations, is found to be the driving force behind the occurrence of th ese features. The stability of the observed facets is related to the d ecrease in dangling-bond densities upon surface reconstruction.