HIGH-BARRIER PT AL N-INP DIODE

Authors
HUANG WC LEI TF LEE CL
Citation
Wc. Huang et al., HIGH-BARRIER PT AL N-INP DIODE, Electronics Letters, 31(11), 1995, pp. 924-925
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
11
Year of publication
1995
Pages
924 - 925
Database
ISI
SICI code
0013-5194(1995)31:11<924:HPAND>2.0.ZU;2-P
Abstract
A new Pt/Al/n-InP, contact diode, which has a good I-V characteristic is studied. It has a barrier height of 0.74eV, which increases to 0.99 eV when it is treated with HF, an ideality factor of 1.18, and a rever se leakage current of 5.5 x 10(-8)A/cm(2) at -3V. This good performanc e is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface.