SCALING BEHAVIOR AND MIXED-STATE HALL-EFFECT IN EPITAXIAL HGBA2CACU2O6-FILMS(DELTA THIN)

We have measured the mixed-state Hall effect in superconducting HgBa2C aCu2O6-delta thin films. We found that the Hall resistivity rho(xy) sh ows a double sign reversal in low fields, then shifts to positive with out changing the general shape in higher fields. At the higher field r egion, the Hall conductivity rho(xy) is observed to be the sum of two terms, C-1/H and C2H, where C-1 and C-2 are field independent. The sca ling behavior between sigma(xy) and rho(xx) (longitudinal resistivity) shows a strong dependence on fields. The scaling exponent beta in rho (xy)=A rho(xx)(beta) increases from 1.5+/-0.1 to 1.9+/-0.1 as field in creases from 1 to 5.5 T. The field dependence of tangent of the Hall a ngle is linear only in the flux-flow regime, different from Bi- and Tl -based cuprates.