In situ real-time scanning tunneling microscopy is used to study Si et
ching in alkaline solutions modified by addition of Triton, a commonly
used nonionic surfactant. On Si(111), time sequences of images, with
the resolution of-atomic steps, show that the rate of the nucleation o
f etch pits is decreased on terraces which reduces the etch rate. Resu
lts are interpreted in term of formation of a self-assembled micellar
layer of Triton molecules whose disorder in the vicinity of atomic sca
le defects improves surface order compared to etching in NaOH. This la
yer being not bound to the surface, the (1 x 1)-H-terminated Si(111) s
urface is always imaged at high resolution. Potential applications of
Triton solutions to the preparation of flat surfaces of Si(111) and (1
00) are discussed.