PREPARATION OF LA-MN COMPLEX OXIDE-FILMS USING RADIO-FREQUENCY MAGNETRON SPUTTERING AND OXYGEN SENSOR CHARACTERISTICS

La-Mn complex oxide films were prepared on Si (111), MgO (100) and SiO 2 glass substrates by radio frequency magnetron sputtering using a LaM nO3+delta target. The films were amorphous when the substrate temperat ure was lower than 550 degrees C, while La8Mn8O23 was formed at the su bstrate temperatures higher than 650 degrees C in Ar. The film of the cubic LaMnO3+delta perovskite with (110) orientation was formed by rea ctive sputtering in O-2/Ar=0.2 (2x10(-3) Torr) at the substrate temper ature higher than 700 degrees C. The cubic perovskite films were also formed by heat-treatment in air or O-2. Both La8Mn8O23 and LaMnO3+delt a films were n-type semiconductors. Pt-Pd/La8Mn8O23/n-Si diode showed the oxygen sensitivity. The mechanism that a surface redox of the La8M n8O23 film importantly affects the schottky barrier of n-Si was propos ed.