LOW-TEMPERATURE GROWTH OF HIGH-T-C SUPERCONDUCTING FILMS BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
KANEHORI K SUGII N SAITO S
Citation
K. Kanehori et al., LOW-TEMPERATURE GROWTH OF HIGH-T-C SUPERCONDUCTING FILMS BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Phase transitions, 42(1-2), 1993, pp. 111-115
Citations number
6
Categorie Soggetti
Crystallography,"Physics, Condensed Matter
Journal title
Phase transitions → ACNP
ISSN journal
01411594
Volume
42
Issue
1-2
Year of publication
1993
Part
B
Pages
111 - 115
Database
ISI
SICI code
0141-1594(1993)42:1-2<111:LGOHSF>2.0.ZU;2-U
Abstract
Plasma-enhanced MOCVD in which metal-organic compounds are sublimated directly into the growth chamber is studied for the first time as a ne w low-temperature process for growing superconducting YBa2Cu3O7-x thin films. Y(THD)(3), Ba(THD)(2), Cu(THD)(2) and oxygen are used as metal sources and oxydizing agent. Emission spectroscopy reveals that activ ated metal-organic compounds and activated oxygen species are present during film growth. Superconducting YBa2Cu3O7-x films whose zero-resis tivity temperature are 50 K and 82 K are grown at 550 degrees C and 60 0 degrees C.