INTERACTIONS AT METAL-OXIDE AND OXIDE OXIDE INTERFACES STUDIED BY ULTRATHIN-FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES

Authors
Citation
Rj. Lad, INTERACTIONS AT METAL-OXIDE AND OXIDE OXIDE INTERFACES STUDIED BY ULTRATHIN-FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES, Surface review and letters, 2(1), 1995, pp. 109-126
Citations number
97
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
ISSN journal
0218625X
Volume
2
Issue
1
Year of publication
1995
Pages
109 - 126
Database
ISI
SICI code
0218-625X(1995)2:1<109:IAMAOO>2.0.ZU;2-I
Abstract
This article reviews aspects of the electronic, chemical, and structur al properties of metal/oxide and oxide/oxide interfaces which are form ed via ultrathin film growth on oxide single-crystal surfaces. The int eractions at the interfaces are classified based on the nature of the reaction products, thermodynamic predictions of interfacial reactions, and wetting and adhesion. Then, properties of single-crystal oxide su bstrates and limitations and difficulties in studying these ceramic sy stems are discussed. The remainder of the article presents experimenta l observations for several systems involving both metal and oxide ultr athin film growth on stoichiometric NiO(100), TiO2(110), and alpha-Al2 O3(<10(1)over bar 2>) surfaces including a discussion of interdiffusio n, chemical and electronic interactions, thermal stability, and interf acial impurity effects.