Rj. Lad, INTERACTIONS AT METAL-OXIDE AND OXIDE OXIDE INTERFACES STUDIED BY ULTRATHIN-FILM GROWTH ON SINGLE-CRYSTAL OXIDE SUBSTRATES, Surface review and letters, 2(1), 1995, pp. 109-126
This article reviews aspects of the electronic, chemical, and structur
al properties of metal/oxide and oxide/oxide interfaces which are form
ed via ultrathin film growth on oxide single-crystal surfaces. The int
eractions at the interfaces are classified based on the nature of the
reaction products, thermodynamic predictions of interfacial reactions,
and wetting and adhesion. Then, properties of single-crystal oxide su
bstrates and limitations and difficulties in studying these ceramic sy
stems are discussed. The remainder of the article presents experimenta
l observations for several systems involving both metal and oxide ultr
athin film growth on stoichiometric NiO(100), TiO2(110), and alpha-Al2
O3(<10(1)over bar 2>) surfaces including a discussion of interdiffusio
n, chemical and electronic interactions, thermal stability, and interf
acial impurity effects.