METAL-RESISTIVE LAYER-SILICON (MRS) AVALANCHE DETECTORS WITH NEGATIVEFEEDBACK

Authors
BISELLO D PACCAGNELLA A PANTANO D GOTRA Y MALAKHOV N JEJER V KUSHPIL V SADYGOV Z
Citation
D. Bisello et al., METAL-RESISTIVE LAYER-SILICON (MRS) AVALANCHE DETECTORS WITH NEGATIVEFEEDBACK, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 360(1-2), 1995, pp. 83-86
Citations number
5
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
360
Issue
1-2
Year of publication
1995
Pages
83 - 86
Database
ISI
SICI code
0168-9002(1995)360:1-2<83:ML(ADW>2.0.ZU;2-7
Abstract
The main electrical characteristics at room temperature of metal-resis tive layer-semiconductor avalanche detectors are presented for devices with a Ti/SiC/p-Si structure. The device response has been tested by using a Sr-90 source. The consequences on the device behavior induced by substrate inhomogeneities have been modeled, and compared with thos e occurring in conventional Avalanche Photo Diodes (APD).