USE OF FIELD PLATE IN A LINEAR SILICON DRIFT DETECTOR (SDD)

Citation
G. Gramegna et al., USE OF FIELD PLATE IN A LINEAR SILICON DRIFT DETECTOR (SDD), Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 360(1-2), 1995, pp. 110-112
Citations number
9
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
ISSN journal
01689002
Volume
360
Issue
1-2
Year of publication
1995
Pages
110 - 112
Database
ISI
SICI code
0168-9002(1995)360:1-2<110:UOFPIA>2.0.ZU;2-C
Abstract
By use of extensive simulation, it is shown how a spread of the alumin ium metallization over the intercathodic field oxide sensibly lowers t he electric field at reverse biased p(+) n junctions, thus allowing us e of higher drift fields. Based on the simulation results, the layout of a few test structures implementing alternative technological choice s has been defined. The fabrication of these prototype detectors is pr esently in progress.