F. Lanni et al., MONOLITHIC SILICON JFET FRONT-END FOR CALORIMETRY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 360(1-2), 1995, pp. 158-161
The buried layer process for integrating Si-JFETs on a monolithic subs
trate was proven to be very suitable in the realisation of low noise,
radiation hard preamplifiers. Two preamplifier versions that differ fo
r the resistivity of the channel region have been realised. The lower
channel resistivity is employed in applications from room temperature
to liquid krypton, while the higher one suits the operation at liquid
argon temperature. The paper describes the essential features of the t
wo types of preamplifier, including the radiation sensitivity to gamma
-rays and neutrons at room temperature and the noise performances at c
ryogenic temperature.