SUB-MILLIAMPERE SINGLE-QUANTUM-WELL INGAAS-GAAS-ALGAAS ADDRESSABLE LASER ARRAYS

Authors
ZHAO HM CHENG Y MACDOUGAL MH YANG GM DAPKUS PD
Citation
Hm. Zhao et al., SUB-MILLIAMPERE SINGLE-QUANTUM-WELL INGAAS-GAAS-ALGAAS ADDRESSABLE LASER ARRAYS, IEEE photonics technology letters, 7(6), 1995, pp. 593-595
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
6
Year of publication
1995
Pages
593 - 595
Database
ISI
SICI code
1041-1135(1995)7:6<593:SSIAL>2.0.ZU;2-3
Abstract
Strained-quantum-well InGaAs-GaAs-AlGaAs lasers and laser arrays with record low threshold currents of 0.6 mA for cleaved devices and 0.145 mA for high-reflectivity facet-coated devices are fabricated by single -step growth on nonplanar substrates by metalorganic chemical vapor de position. These laser arrays have high quantum efficiency, low interna l loss, and high uniformity because of the one-step growth and simplif ied processing procedures.