COMPARISON OF DIFFERENT CHEMICAL-VAPOR-DEPOSITION METHODOLOGIES FOR THE FABRICATION OF HETEROJUNCTION BORON-CARBIDE DIODES

We find that boron-carbide thin film diodes are insensitive to the mor phology of the film. The semiconductor properties of the material do n ot appeal to depend upon crystallite size and the extent of long range order. Boron-carbide diodes were fabricated from a single source comp ound, closo-1,2-dicarbadodecaborane (C2B10H12), and binary source gase s, nidopentaborane (B5H9) and methane (CH4). Closo-1,2-dicarbudodecabo rane was used in both synchrotron radiation induced chemical vapor dep osition (SR-CVD) and plasma enhanced chemical vapor deposition (PECVD) to form boron-carbide films on n-type Si(111). A nidopentaborane and methane combination was also used in PECVD to form boron-carbide films on similar substrate for comparison. All of these boroncarbide films formed similar heterojunction diodes with n-type Si(111).