CORRELATION BETWEEN THE GAP STATES DENSITY AND THE MODES OF HYDROGEN INCORPORATION IN A-SI-H AS A FUNCTION OF DEPOSITION CONDITIONS AND THERMAL ANNEALING

Authors
CHAHED L ZELLAMA K SLADEK P THEYE ML CABARROCAS PRI
Citation
L. Chahed et al., CORRELATION BETWEEN THE GAP STATES DENSITY AND THE MODES OF HYDROGEN INCORPORATION IN A-SI-H AS A FUNCTION OF DEPOSITION CONDITIONS AND THERMAL ANNEALING, Annales de chimie, 19(7-8), 1994, pp. 453-458
Citations number
10
Categorie Soggetti
Chemistry,"Material Science
Journal title
Annales de chimie → ACNP
ISSN journal
01519107
Volume
19
Issue
7-8
Year of publication
1994
Pages
453 - 458
Database
ISI
SICI code
0151-9107(1994)19:7-8<453:CBTGSD>2.0.ZU;2-V
Abstract
We studied the correlations between the deep defect state density and disorder parameter as deduced by PDS and CPM, and the amount and bondi ng modes of hydrogen as derived from IR absorption in a-Si:H, as a fun ction of deposition conditions and thermal annealing. The results indi cate a better bonded hydrogen stability in the samples deposited at hi gh rate, due to their particular microstructure.