STUDY OF PHYSICAL-PROPERTIES OF INDIUM-DOPED ZNO AIRLESS SPRAYED THIN-LAYERS

In this work, we report the results of structural optical and electric al properties of the ZnO semiconductors thin layers doped with indium in the spray solution ([In]/[Zn] = 0 - 3 % at.) and prepared by the ai rless spray technique. X-ray diffraction analysis showed that these la yers prepared at a substrate temperature of 420 degrees C, are well cr ystallized and oriented preferentially in the (002) direction. For 1 m u m thick airless spray ZnO thin layer, the study of the optical prope rties from reflection and transmission spectra indicates a high value of the transmission (congruent to 80 %), the band gap energy is about 3.2 eV and the reflection index is equalto 1.7 in the transparency ran ge. On the other hand, indium-doped ZnO thin layers for a ratio 3 % at ., in the spray solution, have a low value of resistivity of the order of 7.10(-4) Ohm.cm.