RBS ANALYSIS OF PHOSPHORUS-GETTERING OF GOLD AND COPPER IN SILICON

In this work, we will present results showing that Rutherford Back-Sca ttering (RBS) is particularly efficient to study the extrinsic getteri ng of Au and Cu by phosphorus diffusion in a classical or rapid therma l furnace. We have found bu RBS measurement that an accumulation of Au and Cu in the phosphorus doped region is clearly evidenced after clas sical or rapid thermal diffusion of phosphorus from a spin-on deposite d silicon glass source in the temperature range 950-1050 degrees C for typical durations of 15 min and 25 sec respectively, confirming the e xistence of a classical as well as a rapid thermal gettering effect.