GENERATION PHENOMENA OF LOCALIZED INTERFACE STATES INDUCED BY IRRADIATION AND POSTIRRADIATION ANNEALING AT THE SI SIO2 INTERFACE - COMMENT/

Authors
ALEXANDROVA S
Citation
S. Alexandrova, GENERATION PHENOMENA OF LOCALIZED INTERFACE STATES INDUCED BY IRRADIATION AND POSTIRRADIATION ANNEALING AT THE SI SIO2 INTERFACE - COMMENT/, Journal of applied physics, 77(5), 1995, pp. 2223-2223
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
5
Year of publication
1995
Pages
2223 - 2223
Database
ISI
SICI code
0021-8979(1995)77:5<2223:GPOLIS>2.0.ZU;2-A