DETERMINATION OF INP HEMT NOISE PARAMETERS AND S-PARAMETERS TO 60 GHZ

A millimeterwave experimental technique is described for directly dete rmining the noise parameters and scattering parameters of V-band InP H EMT's. The parameters are suitable for the design of monolithic millim eterwave integrated circuits since they represent the InP HEMT as it w ould appear in the monolithic environment. The method relies on carefu l characterization of the measurement system and the InP HEMT packages or test fixtures. Results are provided for an InP HEMT with 1.37 dB m inimum noise figure and a maximum stable gain of 12.74 dB at 57 GHz. I n addition, it is shown that noise parameters measured between 2 GHz a nd 26 GHz can be extrapolated to 60 GHz, and that consistent S-paramet ers can be obtained for InP HEMT's in precision packages and test fixt ures.