EFFICIENT FULL-WAVE ANALYSIS OF STRATIFIED PLANAR STRUCTURES AND UNBIASED TW-FETS

We have developed a rigorous full-wave analysis technique capable of c haracterizing quasiplanar travelling wave structures, constituted of m ultilayer dielectrics and conductors of finite thickness, also taking into account dielectric and conductor losses. We have studied boxed em bedded microstrips and another complex passive structure, namely the T -gate TW-FET, devoting particular attention to the distribution of cur rent inside the metallization. All structures considered were simulate d by means of a desktop computer. We have tested our program by compar ing our results with experimental data of embedded microstrips and emp loyed it for the characterization of planar and T-type gates of the FE T's without bias.